Compact modeling of ballistic nanowire MOSFETs

IEEE Transactions on Electron Devices

Volumn 55, Issue 11, 2008, Pages 2877-2885

  Natori, Kenji ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Ballistic transport; Compact model; Nanowire FET; Silicon

Indexed keywords

BALLISTICS; CAPACITANCE; DRAIN CURRENT; EXPLOSIVES; FIELD EFFECT TRANSISTORS; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; POWDERS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SILICON;

AND GATES; BALLISTIC NANOWIRES; BALLISTIC TRANSPORT; BIAS DEPENDENCES; CARRIER DENSITIES; COMPACT MODEL; COMPACT MODELING; COMPACT MODELS; CURRENT EXPRESSIONS; DEVICE CURRENTS; MOS FETS; NANOWIRE FET; OVERALL PROPERTIES; QUANTUM CAPACITANCES; QUANTUM CONDUCTANCES; SHORT-CHANNEL EFFECTS; SUB BANDS; SUBTHRESHOLD CHARACTERISTICS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 56549117612     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2008009     Document Type: Article

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