Experimental Study of Biaxial and Uniaxial Strain Effects on Carrier Mobility in Bulk and Ultrathin-body SOI MOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 229-232

  Uchida, Ken ^a,b   Zedník, Ricardo ^a   Lu, Ching Huang ^a   Jagannathan, Hemanth ^a   McVittie, James ^a   McLntyre, Paul C ^a   Nishi, Yoshio ^a  

^a Stanford University   (United States)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL STRAIN EFFECT; CARRIER TRANSPORT; COMPRESSIVE STRAIN; PIEZORESISTANCE; UNIAXIAL TENSILE STRAIN;

ELECTRIC RESISTANCE; ELECTRON MOBILITY; ELECTRON TRANSITIONS; HOLE MOBILITY; SILICON ON INSULATOR TECHNOLOGY; STRAIN; STRESS ANALYSIS; ULTRATHIN FILMS;

MOSFET DEVICES;

EID: 19044393023     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. S. Takagi et al, IEDM, pS7, 2003.
2. J.L. Hoyt et al, IEDM, p23, 2002.
3. K. Rim et al, IEDM, p49, 2003.
4. T. Mizuno et al., IEDM, p31,2002.
5. I. Aberg et al, VLSI Tech, p52, 2004.
6. T. Ghatii et al, IEDM, p978, 2003.
7. S. Thompson et al, EDL 25, pl91, 2004.
8. R. E. Bclford et al, D R C, p41, 2002
9. W. Zhao et al., T-ED 51, p317, 2004.
10. K. Uchida et al, IEDM, p47, 2002.
11. S. Takagi et al, IEDM, p219, 1997