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Volumn 93, Issue 24, 2008, Pages

Temperature dependence of enhanced hole mobility in uniaxial strained p -channel metal-oxide-semiconductor field-effect transistors and insight into the physical mechanisms

(6) Yang, Xiaodong a Parthasarathy, Srivatsan a Sun, Yongke a Koehler, Andrew a Nishida, Toshikazu a Thompson, Scott E a

a University of Florida (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; FIELD EFFECT SEMICONDUCTOR DEVICES; FIELD EFFECT TRANSISTORS; MOSFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SURFACE ROUGHNESS; TRANSISTORS;

BAND EDGES; CHANNEL DIRECTIONS; ENHANCED MOBILITIES; FINITE DIFFERENCES; HOLE CONDUCTIVITIES; LIGHT HOLES; MASS REDUCTIONS; PHYSICAL MECHANISMS; SEMI-CONDUCTORS; SURFACE ROUGHNESS SCATTERINGS; TEMPERATURE DEPENDENCES; UNIAXIAL STRESSES;

HOLE MOBILITY;

EID: 57849093122 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3046725 Document Type: Article

Times cited : (7)

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