Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion

Journal of Applied Physics

Volumn 89, Issue 10, 2001, Pages 5478-5487

  Gamiz, F ^a   Fischetti, M V ^b  

^a UNIVERSITY OF GRANADA   (Spain)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035872875     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1358321     Document Type: Article

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