Strain-driven electronic band structure modulation of Si nanowires

Nano Letters

Volumn 8, Issue 5, 2008, Pages 1335-1340

  Hong, Ki Ha ^a   Kim, Jongseob ^a   Lee, Sung Hoon ^a   Shin, Jai Kwang ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ELECTRIC WIRE; ENERGY GAP; HOLE MOBILITY; MODULATION; NANOWIRES; PHOTONIC BAND GAP; SILICON;

BAND STRUCTURE MODULATIONS; BAND-STRUCTURE ENGINEERINGS; BULK SILICONS; COMPRESSIVE STRAINS; DIRECT BAND GAPS; ELECTRONIC BAND STRUCTURES; INDIRECT BAND GAPS; LATTICE STRAINS; NANO-SCALE DEVICES; NEW STRATEGIES; SI NANOWIRES; STRAIN DEPENDENCES; UNI-AXIAL STRAINS;

TENSILE STRAIN;

NANOTUBE; SILICON;

ARTICLE; CHEMICAL MODEL; CHEMICAL STRUCTURE; CHEMISTRY; COMPUTER SIMULATION; CONFORMATION; ELASTICITY; ELECTRIC CONDUCTIVITY; ELECTRONICS; MACROMOLECULE; MATERIALS TESTING; MECHANICAL STRESS; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; ULTRASTRUCTURE;

COMPUTER SIMULATION; ELASTICITY; ELECTRIC CONDUCTIVITY; ELECTRONICS; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MODELS, CHEMICAL; MODELS, MOLECULAR; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; SILICON; STRESS, MECHANICAL;

EID: 45249106498     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl0734140     Document Type: Article

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