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Volumn 87, Issue 4, 2005, Pages
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Theoretical investigation of surface roughness scattering in silicon nanowire transistors
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Author keywords
[No Author keywords available]
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Indexed keywords
FILM THICKNESS;
QUANTUM TRANSPORT SIMULATOR;
SILICON NANOWIRE TRANSISTOR;
SURFACE ROUGHNESS SCATTERING (SRS);
CARRIER CONCENTRATION;
FINITE ELEMENT METHOD;
NANOSTRUCTURED MATERIALS;
QUANTUM THEORY;
SILICON;
SURFACE ROUGHNESS;
TRANSPORT PROPERTIES;
TRANSISTORS;
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EID: 23744458365
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2001158 Document Type: Article |
Times cited : (142)
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References (15)
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