Comparison of uniaxial wafer bending and contact-etch-stop-liner stress induced performance enhancement on double-gate FinFETs

IEEE Electron Device Letters

Volumn 29, Issue 5, 2008, Pages 480-482

  Suthram, Sagar ^a   Hussain, M M ^b   Harris, H R ^b   Smith, C ^b   Tseng, H H ^b   Jammy, R ^b   Thompson, S E ^a  

^a UNIVERSITY OF FLORIDA   (United States)

^b SEMATECH   (United States)

Author keywords

Contact etch stop liners (CESLs); FinFET; Piezoresistance; Wafer bending and strain

Indexed keywords

GATES (TRANSISTOR); PIEZOELECTRICITY; STRAIN; WAFER BONDING;

CONTACT-ETCH-STOP LINERS; PIEZORESISTANCE;

MOSFET DEVICES;

EID: 43549113608     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.919791     Document Type: Article

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