Generalized effective-mass approach for n -type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers

Journal of Applied Physics

Volumn 97, Issue 5, 2005, Pages

  Rahman, Anisur ^a   Lundstrom, Mark S ^a   Ghosh, Avik W ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARBITRARILY ORIENTED WAFERS; CONDUCTION BANDS; DIPOLAR COUPLING; WAFER ORIENTATION;

COMPUTER SIMULATION; ELECTRIC POTENTIAL; GREEN'S FUNCTION; KINETIC ENERGY; MATHEMATICAL MODELS; QUANTUM THEORY; SILICON;

MOSFET DEVICES;

EID: 20444441501     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1845586     Document Type: Article

References (33)

1. International Technology Roadmap for Semiconductors, 2003 edition.
2. F. Stern and W. E. Howard, Phys. Rev. 163, 816 (1967).
3. F. Stern, Phys. Rev. B 5, 4891 (1972).
4. M. Lundstrom and Z. Ren, IEEE Trans. Electron Devices 49, 133 (2002).
5. S. Datta, Electronic Transport in Mesoscopic Systems (Cambridge University Press, Cambridge, 1997).
6. A. Svizhenko, M. P. Anantram, T. R. Govindan, B. Biegel, and R. Venugopal, J. Appl. Phys. 91, 2343 (2002).
7. R. Venugopal, Z. Ren, S. Datta, and M. S. Lundstrom, and D. Jovanovic, J. Appl. Phys. 92, 3730 (2002).
8. J. Knoch, B. Lengeler, and J. Appenzeller, IEEE Trans. Electron Devices 49, 1212 (2002).
9. J. Guo and M. S. Lundstrom, IEEE Trans. Electron Devices 49, 1897 (2002).
10. R. Venugopal, M. Paulsson, S. Goasguen, S. Datta, and M. S. Lundstrom, J. Appl. Phys. 93, 5613 (2003).
11. A. Svizhenko and M. P. Anantram, IEEE Trans. Electron Devices 50, 1459 (2003).
12. P. Damle, A. Ghosh, and S. Datta, Molecular Nanoelectronics (American Scientific, Stevenson Ranch, CA, 2003), pp. 115-135.
13. R. Venugopal, S. Goasguen, S. Datta, and M. S. Lundstrom, J. Appl. Phys. 95, 292 (2004).
14. F. Assad, Z. Ren, D. Vasileska, S. Datta, and M. Lundstrom, IEEE Trans. Electron Devices 47, 232 (2000).
15. A. Rahman, J. Guo, S. Datta, and M. S. Lundstrom, IEEE Trans. Electron Devices 50, 1853 (2003).
16. J. Wang and M. Lundstrom, IEEE Trans. Electron Devices 50, 1604 (2003).
17. Available at http://www.nanohub.purdue.edu/
18. Z. Ren, R. Venugopal, S. Goasguen, S. Datta, and M. S. Lundstrom, IEEE Trans. Electron Devices 50, 1914 (2003).
19. C. O. Chui, S. Ramanathan, B. B. Triplett, P. C. McIntyre, and K. C. Saraswat, IEEE Electron Device Lett. 23, 473 (2002).
20. H. Shang, H. Okorn-Schmidt, J. Ott, P. Kozlowski, S. Steen, E. C. Jones, H.-S. P. Wong, and W. Hanesch, IEEE Electron Device Lett. 24, 242 (2003).
21. M. L. Lee, Appl. Phys. Lett. 79, 3344 (2001).
22. T. Mizuno, N. Sugiyama, T. Tezuka, and S. Takagi, IEEE Electron Device Lett. 24, 266 (2003).
23. T. Ando, A. B. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).
24. G. Dresselhaus, A. F. Kip, and C. Kittel, Phys. Rev. 98, 368 (1955).
25. R. N. Dexter, B. Lax, A. F. Kip, and G. Dresselhaus, Phys. Rev. 96, 222 (1954).
26. R. F. Pierret, Advanced Semiconductor Fundamentals, 2nd ed. (Prentice-Hall, Englewood Cliffs, NJ, 2002).
27. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
28. J. M. Luttinger and W. Kohn, Phys. Rev. 97, 869 (1955).
29. R. N. Dexter, H. J. Zeiger, and B. Lax, Phys. Rev. 104, 637 (1956).
30. J. C. Hensel, H. Hasegawa, and M. Nakayama, Phys. Rev. 138, A225 (1965).
31. M. V. Fischetti and S. E. Laux, J. Appl. Phys. 80, 2234 (1996).
32. M. M. Rieger and P. Vogl, Phys. Rev. B 48, 14276 (1993).
33. A. Rahman, A. Ghosh, and M. Lundstrom, Tech. Dig. - Int. Electron Devices Meet. 2003, 471 (2003).