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Volumn 28, Issue 7, 2007, Pages 558-561

Observation of metal-layer stress on Si nanowires in gate-all-around high-κ/metal-gate device structures

Author keywords

Gate all around (GAA); Metal gate; MOSFETs; Si nanowire; Stretched; Twisted

Indexed keywords

HOOKE'S LAW; METAL GATE;

EID: 34447260751     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.899330     Document Type: Article
Times cited : (48)

References (14)
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    • Silicon vertically integrated nanowire field effect transistors
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.