Bandstructure effects in ballistic nanoscale MOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 139-142

  Rahman, Anisur ^a   Klimeck, Gerhard ^b   Boykin, Timothy B ^b   Lundstrom, Mark ^b  

^a PURDUE UNIVERSITY   (United States)

^b UNIVERSITY OF ALABAMA IN HUNTSVILLE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE EFFECTS; QUANTUM CONFINEMENT; SEMI EMPIRICAL TIGHT BINDING MODELS; ULTRA THIN BODIES (UTB); AXIAL COMPRESSIVE STRAIN; BALLISTIC TRANSPORTS; EFFECTIVE MASS APPROACH; MOSFETS; NANOSCALE MOSFETS; P-MOSFETS; PERFORMANCE; ULTRATHIN BODY;

BAND STRUCTURE; CHARGE CARRIERS; ELECTRON TRANSPORT PROPERTIES; ELECTROSTATICS; MATHEMATICAL MODELS; STRAIN; MOSFET DEVICES;

MOSFET DEVICES; BALLISTICS;

EID: 21644467582     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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7. T. Boykin et al, PRB, Vol. 66, 125207, 2002.
8. G. Klimeck et al, CMES, Vol. 3, No. 5, pp. 601-642, 2002