Bandstructure effects in silicon nanowire hole transport

IEEE Transactions on Nanotechnology

Volumn 7, Issue 6, 2008, Pages 710-719

  Neophytou, Neophytos ^a   Paul, Abhijeet ^a   Klimeck, Gerhard ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Anisotropy; Atomistic; Bandstructure; Effective mass; Full band; Hole; Injection velocity; MOSFETS; Nanowire; Nonparabolicity; P channel MOS (PMOS); Quantum capacitance; Tight binding; Transistors; Valence band

Indexed keywords

ANISOTROPY; CAPACITANCE; ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; MESFET DEVICES; MOSFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; TRANSISTORS; VALENCE BANDS; WIRE;

ATOMISTIC; BANDSTRUCTURE; EFFECTIVE MASS; FULL BAND; HOLE; INJECTION VELOCITY; MOSFETS; NONPARABOLICITY; P-CHANNEL MOS (PMOS); QUANTUM CAPACITANCE; TIGHT BINDING;

NANOWIRES;

EID: 58149242619     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2008.2006272     Document Type: Article

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