Influence of band-structure on electron ballistic transport in silicon nanowire MOSFET's: An atomistic study

Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference

Volumn 2005, Issue , 2005, Pages 229-232

  Nehari, K ^a   Cavassilas, N ^a   Autran, J L ^a,b   Bescond, M ^c   Munteanu, D ^a   Lannoo, M ^a  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b INSTITUT UNIVERSITAIRE DE FRANCE   (France)

^c UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BAND STRUCTURE; ENERGY DISPERSIONS RELATIONS; SILICON NANOWIRES;

ELECTRIC PROPERTIES; ELECTRON TRANSPORT PROPERTIES; FORMAL LOGIC; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; POISSON EQUATION;

BAND STRUCTURE;

EID: 33751401809     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2005.1546627     Document Type: Conference Paper

References (5)

1. Bescond M., Nehari K., Autran J.L., Cavassilas N., Munteanu D., and Lannoo M., IEDM Tech. Digest (IEEE), p.617, San Francisco (USA), December 2004.
2. Rahman A., Klimeck G., Boykin T. B., Lundstrom M., IEDM Tech. Dig., pp. 139 -142, Dec. 2004.
3. Niquet Y.M., Delerue C., Allan O., and Lannoo M., Phys. Rev. B, 62 (8):5109-5116, Aug 2000.
4. Boykin T.B., Klimeck O., Eriksson M.A., Friesen, M., Coppersmith, Von Allmen P. et al., App. Phys. Lett., 84(1):115-117, Jan. 2004.
5. J. Wang, E. Polizzi, and M. S. Lundstrom, J. Appl. Phys. 96(4), 2192-2203 Aug. 2004.