Size dependence of surface-roughness-limited mobility in silicon-nanowire FETs

IEEE Transactions on Electron Devices

Volumn 55, Issue 11, 2008, Pages 2968-2976

  Poli, Stefano ^a,b   Pala, Marco G ^c   Poiroux, Thierry ^b   Deleonibus, Simon ^b   Baccarani, Giorgio ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b CEA GRENOBLE   (France)

^c MINATEC   (France)

Author keywords

Effective mobility; Nonequilibrium Green's functions (NEGFs); Quasi ballistic transport; Silicon nanowire (Si NW); Surface roughness (SR)

Indexed keywords

BALLISTICS; DIFFERENTIAL EQUATIONS; ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; FRICTION; GREEN'S FUNCTION; MESFET DEVICES; MOSFET DEVICES; NANOSTRUCTURES; NANOWIRES; SILICON; SILICON COMPOUNDS; SURFACE PROPERTIES; SURFACE ROUGHNESS; THREE DIMENSIONAL; WIRE;

CHANNEL REGIONS; EFFECTIVE MOBILITIES; EFFECTIVE MOBILITY; ELECTRON DENSITIES; HIGH GATE VOLTAGES; LATERAL SIZES; MODE COUPLINGS; NANOWIRE FETS; NONEQUILIBRIUM GREEN'S FUNCTIONS (NEGFS); PARASITIC EFFECTS; POTENTIAL FLUCTUATIONS; QUASI-BALLISTIC TRANSPORT; SILICON NANOWIRE (SI-NW); SIZE DEPENDENCES; STANDARD DEVIATIONS; STATISTICAL ANALYSIS;

NANOSTRUCTURED MATERIALS;

EID: 56549113551     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2005164     Document Type: Article

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