Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor

Applied Physics Letters

Volumn 92, Issue 6, 2008, Pages

  Liao, M H ^a   Liu, C W ^a   Yeh, Lingyen ^b   Lee, T L ^b   Liang, M S ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; CARRIER TRANSPORT; CHARGE INJECTION; CIRCUIT THEORY; FINITE ELEMENT METHOD; GATE DIELECTRICS; THREE DIMENSIONAL;

BALLISTIC EFFICIENCY; CARRIER MEAN FREE PATH; GATE LENGTHS; INJECTION VELOCITY; MULTICHANNEL DEVICES;

MOSFET DEVICES;

EID: 39349101575     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2839402     Document Type: Article

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