Atomistic approach for nanoscale devices at the scaling limit and beyond-valley splitting in Si

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2187-2190

  Rahman, Anisur ^a   Klimeck, Gerhard ^a   Lundstrom, Mark ^a   Boykin, Timothy B ^b   Vagidov, Nizami ^c  

^a PURDUE UNIVERSITY   (United States)

^b UNIVERSITY OF ALABAMA IN HUNTSVILLE   (United States)

^c the State University of New York   (United States)

Author keywords

Bandstructure; Charge flactuation; Tight binding; Ultra thin body Si; Valley splitting

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC CHARGE; ELECTRIC CONDUCTANCE; GROUND STATE; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

BANDSTRUCTURES; CHARGE FLUCTUATION; TIGHT-BINDING; ULTRA-THIN-BODY SI; VALLEY SPLITTING;

MOSFET DEVICES;

EID: 21244486674     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2187     Document Type: Conference Paper

References (6)

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