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Volumn , Issue , 2006, Pages 58-59
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Sub-5nm all-around gate FinFET for ultimate scaling
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Author keywords
All around gate; FinFET; Quantum effect; Sub 5nm
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Indexed keywords
COMPUTER SIMULATION;
PERTURBATION TECHNIQUES;
QUANTUM CONFINEMENT;
SCALING LAWS;
THRESHOLD VOLTAGE;
CHANNEL ORIENTATION EFFECT;
FIRST-ORDER PERTURBATION THEORY;
FIELD EFFECT TRANSISTORS;
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EID: 36849066110
PISSN: 07431562
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (140)
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References (15)
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