Modeling of surface-roughness scattering in ultrathin-body SOI MOSFETs

IEEE Transactions on Electron Devices

Volumn 54, Issue 9, 2007, Pages 2191-2203

  Jin, Seonghoon ^a   Fischetti, Massimo V ^a   Tang, Ting Wei ^a  

^a University of Massachusetts   (United States)

Author keywords

Dielectric; High ; Image potential; Mobility modeling; Silicon on insulator (SOI) MOSFETs; Surface roughness SR) scattering ; Thickness fluctuations

Indexed keywords

COULOMB INTERACTIONS; ELECTRON MOBILITY; MATHEMATICAL MODELS; PERMITTIVITY; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; SURFACE ROUGHNESS;

IMAGE POTENTIAL; LOW-FIELD ELECTRON MOBILITY; SURFACE-ROUGHNESS SCATTERING;

MOSFET DEVICES;

EID: 40949157889     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.902712     Document Type: Article

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