New findings on Coulomb scattering mobility in strained-Si nFETs and its physical understanding

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2007, Pages 130-131

  Weber, Olivier ^a   Takagi, Shin Ichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON MOBILITY; SILICON;

COULOMB SCATTERING; INTERFACE STATES; STRAINED-SI; VLSI TECHNOLOGIES;

ELECTRICAL ENGINEERING;

EID: 47249147956     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2007.4339755     Document Type: Conference Paper

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