First-principles study on piezoresistance effect in silicon nanowires

Japanese Journal of Applied Physics

Volumn 47, Issue 6 PART 2, 2008, Pages 5132-5138

  Nakamura, Koichi ^a   Isono, Yoshitada ^a,b   Toriyama, Toshiyuki ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

^b KOBE UNIVERSITY   (Japan)

Author keywords

First principles calculation; Giant piezoresitivity; Low dimensional semiconductor; Micro electro mechanical systems; Silicon nanowire

Indexed keywords

CIVIL AVIATION; ELECTRIC WIRE; EMPLOYMENT; MICROELECTROMECHANICAL DEVICES; MODEL STRUCTURES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SOLID STATE PHYSICS;

FIRST-PRINCIPLES CALCULATION; GIANT PIEZORESITIVITY; LOW-DIMENSIONAL SEMICONDUCTOR; MICRO-ELECTRO-MECHANICAL SYSTEMS; SILICON NANOWIRE;

SEMICONDUCTING SILICON;

EID: 55049090910     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.5132     Document Type: Article

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