Physics of carrier-transport mechanisms and ultra-small scale phenomena for theoretical modelling of nanometer MOS transistors from diffusive to ballistic regimes of operation

Physics Reports

Volumn 398, Issue 2, 2004, Pages 67-131

  Khanna, Vinod Kumar ^a  

^a CENTRAL ELECTRONICS ENGINEERING RESEARCH INSTITUTE   (India)

Author keywords

Ballistic FET; Charge transport; NanoMOSFET; Velocity overshoot

Indexed keywords

EID: 3242798272     PISSN: 03701573     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physrep.2004.04.003     Document Type: Review

References (139)

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