Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes

Applied Physics Letters

Volumn 80, Issue 20, 2002, Pages 3817-3819

  Wind, S J ^a   Appenzeller, J ^a   Martel, R ^a   Derycke, V ^a   Avouris, Ph ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; CONDUCTION CHANNEL; DEVICE PERFORMANCE; ELECTRICAL CHARACTERISTIC; GATE ELECTRODES; GATE VOLTAGES; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOS-FET; MOSFETS; NANOELECTRONIC APPLICATIONS; SILICON DEVICES; SUBTHRESHOLD SLOPE; TOP GATE; VERTICAL SCALING;

ELECTRODES; GATE DIELECTRICS; MOSFET DEVICES; NANOSENSORS; SEMICONDUCTING SILICON COMPOUNDS; TRANSISTORS;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

EID: 79956022434     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1480877     Document Type: Article

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