A 0.13 μm poly-SiGe gate CMOS technology for low-voltage mixed-signal applications

IEEE Transactions on Electron Devices

Volumn 47, Issue 7, 2000, Pages 1507-1513

  Ponomarev, Youri V ^a   Stolk, Peter A ^a   Dachs, Charles J J ^a   Montree, André H ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Analog; CMOSFET's; MOS devices; Poly SiGe

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; MOSFET DEVICES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

CHANNEL DOPING; GATE WORKFUNCTION ENGINEERING; MIXED DIGITAL ANALOG CIRCUITRY; SHORT CHANNEL EFFECTS;

CMOS INTEGRATED CIRCUITS;

EID: 0034227134     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.848300     Document Type: Article

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