Ultrathin gate oxide grown on nitrogen-implanted silicon for deep submicron CMOS transistors

IEEE Transactions on Electron Devices

Volumn 48, Issue 10, 2001, Pages 2310-2316

  Nam, In Ho ^b   Sim, Jae Sung ^b   Hong, Sung In ^b   Park, Byung Gook ^a,b   Lee, Jong Duk ^a,b   Lee, Seung Woo ^c   Kang, Man Sug ^c   Kim, Young Wug ^c   Suh, Kwang Pyuk ^a,c   Lee, Won Seong ^c  

^a IEEE

^b Seoul National University   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

Boron penetration; Gate oxide; MOSFET; Nitrogen ion implantation; SiO2 Si interface

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC PROPERTIES; ELECTRIC CURRENT MEASUREMENT; GATES (TRANSISTOR); HOT CARRIERS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSISTORS;

BORON PENETRATION; DEEP SUBMICRON TRANSISTORS; NITROGEN ION IMPLANTATION; NITROGEN-IMPLANTED SILICON; SILICON DIOXIDE INTERFACE; SILICON INTERFACE; SILICON SUBSTRATE; TIME ZERO DIELECTRIC BREAKDOWN; ULTRATHIN GATE OXIDE;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0035471240     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.954470     Document Type: Article

References (12)

1. 2O ambient
2. Performance and reliability accessment of dual-gate CMOS devices with gate oxide grown on nitrogen implanted Si substrates
3. 25 Å gate oxide without boron penetration for 0.25 and 0.3 μm pMOSFETs
4. 2 oxides by direct nitrogen implantation into silicon
5. 2O plasma
6. 2O and NO oxynitride gate and tunnel dielectrics
7. Ultra-thin gate oxide grown on nitrogen implanted silicon
8. Light nitrogen implant for preparing thin-gate oxides
9. Reliability of gate oxide grown on nitrogen implanted Si substrates
10. Annealing effects on QBD of ultra-thin gate oxide grown on nitrogen implanted silicon
11. Dependence of thin oxide films quality on surface microroughness
12. Surface and interface roughness of ultrathin nitric oxide oxynitride gate dielectric