Assessment of silicon MOS and carbon nanotube FET performance limits using a general theory of ballistic transistors

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 711-714

  Guo, Jing ^a   Datta, Supriyo ^a   Lundstrom, Mark ^a   Brink, Markus ^b   McEuen, Paul ^b   Javey, Ali ^c   Dai, Hongjie ^c   Kim, Hyoungsub ^c   McIntyre, Paul ^c  

^a PURDUE UNIVERSITY   (United States)

^b Department of Obstetrics Gynecology   (United States)

^c STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; COMPUTER SIMULATION; ELECTROSTATICS; PERMITTIVITY; POISSON EQUATION; SCHOTTKY BARRIER DIODES; SILICON;

GATE ELECTRODES;

MOSFET DEVICES;

EID: 0036927921     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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