Quantum simulations of an ultrashort channel single-gated n-MOSFET on SOI

IEEE Transactions on Electron Devices

Volumn 49, Issue 7, 2002, Pages 1212-1218

  Knoch, J ^a   Lengeler, B ^a   Appenzeller, J ^b  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Ballistic transport; Quantum mechanical calculations; Silicon on insulator (SOI); Single gated MOSFET

Indexed keywords

COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; FABRICATION; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; LEAKAGE CURRENTS; MOSFET DEVICES; QUANTUM ELECTRONICS; ROUGHNESS MEASUREMENT; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

BALLISTIC TRANSPORT; DRAIN TUNNELING; GATE LEAKAGE; QUANTUM MECHANICAL SIMULATION;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0036638178     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.1013278     Document Type: Article

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