A numerical study of ballistic transport in a nanoscale MOSFET

Solid-State Electronics

Volumn 46, Issue 11, 2002, Pages 1899-1906

  Rhew, Jung Hoon ^a   Ren, Zhibin ^a   Lundstrom, Mark S ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Ballistic transport; Boltzmann transport equation; Macroscopic transport models; Nanoscale MOSFETs; Velocity overshoot

Indexed keywords

CHARGE CARRIERS; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); NANOSTRUCTURED MATERIALS; POISSON EQUATION; SILICON ON INSULATOR TECHNOLOGY;

BALLISTIC TRANSPORT;

MOSFET DEVICES;

EID: 0036839486     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00130-2     Document Type: Article

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