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Volumn 46, Issue 7, 1999, Pages 1551-1561

Optimization of Vth roll-off in MOSFET's with advanced channel architecture - retrograde doping and pockets

Author keywords

[No Author keywords available]

Indexed keywords

POCKET IMPLANTATION; RETROGADE CHANNEL; SHORT CHANNEL EFFECTS;

EID: 0032624754     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.772510     Document Type: Article
Times cited : (44)

References (13)
  • 1
    • 33749745758 scopus 로고
    • A 0.1-μm CMOS technology with tilt-implanted punchthrough stopper (TIPS)
    • T. Hori, "A 0.1-μm CMOS technology with tilt-implanted punchthrough stopper (TIPS)," in IEDM Tech. Dig., 1990, pp. 391-394.
    • (1990) IEDM Tech. Dig. , pp. 391-394
    • Hori, T.1
  • 2
    • 0023984435 scopus 로고
    • The voltage-doping transformation: A new approach to the modeling of MOSFET short-channel effects
    • Mar.
    • T. Skotnicki, G. Merckel and T. Pedron, "The voltage-doping transformation: A new approach to the modeling of MOSFET short-channel effects," IEEE Electron Devices Lett., vol. 9, pp. 109-112, Mar. 1988.
    • (1988) IEEE Electron Devices Lett. , vol.9 , pp. 109-112
    • Skotnicki, T.1    Merckel, G.2    Pedron, T.3
  • 3
    • 0024647355 scopus 로고
    • Analytical study of punchthrough in buried channel P-MOSFET's
    • Apr.
    • _, "Analytical study of punchthrough in buried channel P-MOSFET's," IEEE Trans. Electron Devices, vol. ED-36, pp. 690-704, Apr. 1989.
    • (1989) IEEE Trans. Electron Devices , vol.ED-36 , pp. 690-704
  • 4
    • 0024771718 scopus 로고
    • Anomalous punchthrough in ULSI buried-channel MOSFET's
    • Nov.
    • _, "Anomalous punchthrough in ULSI buried-channel MOSFET's," IEEE Trans. Electron Devices, vol. ED-36, pp. 2548-2556, Nov. 1989.
    • (1989) IEEE Trans. Electron Devices , vol.ED-36 , pp. 2548-2556
  • 8
    • 0029723262 scopus 로고    scopus 로고
    • Electrical performances of retrograde versus conventional profiles MOSFET's
    • T. Skotnicki and P. Bouillon, "Electrical performances of retrograde versus conventional profiles MOSFET's," in Dig. Symp. VLSI Technol., 1996, pp. 152-153.
    • (1996) Dig. Symp. VLSI Technol. , pp. 152-153
    • Skotnicki, T.1    Bouillon, P.2
  • 10
    • 33749760741 scopus 로고    scopus 로고
    • Explanation of the 'long distance' Vt roll-off
    • S. Kubicek, J. Lyu, and K. De Meyer, "Explanation of the 'long distance' Vt roll-off," in Proc. ESSDERC Conf., 1998, pp. 369-371.
    • (1998) Proc. ESSDERC Conf. , pp. 369-371
    • Kubicek, S.1    Lyu, J.2    De Meyer, K.3
  • 11
    • 84886447959 scopus 로고    scopus 로고
    • Anomalous short channel effects in indium implanted nMOSFET's
    • P. Bouillon, R. Gwoziecki, and T. Skotnicki, "Anomalous short channel effects in indium implanted nMOSFET's," in IEDM Tech. Dig., 1997, pp. 231-234.
    • (1997) IEDM Tech. Dig. , pp. 231-234
    • Bouillon, P.1    Gwoziecki, R.2    Skotnicki, T.3
  • 12
    • 0031118622 scopus 로고    scopus 로고
    • Short-channel effect improved by lateral channel engineering in deep-submicrometer MOSFET's
    • Apr.
    • B. Yu, C. H. J. Wann, E. D. Nowak, K. Noda, and C. Hu, "Short-channel effect improved by lateral channel engineering in deep-submicrometer MOSFET's," IEEE Trans. Electron Devices, vol. ED-44, pp. 627-633, Apr. 1997.
    • (1997) IEEE Trans. Electron Devices , vol.ED-44 , pp. 627-633
    • Yu, B.1    Wann, C.H.J.2    Nowak, E.D.3    Noda, K.4    Hu, C.5
  • 13
    • 84908211536 scopus 로고    scopus 로고
    • Improved understanding and optimization of 0.18 μm CMOS technology with retrograde channel and pockets
    • R. Gwoziecki, T. Skotnicki, P. Bouillon, M. Haond, and W. De Coster, "Improved understanding and optimization of 0.18 μm CMOS technology with retrograde channel and pockets," in Proc. ESSDERC'98, pp. 352-355.
    • Proc. ESSDERC'98 , pp. 352-355
    • Gwoziecki, R.1    Skotnicki, T.2    Bouillon, P.3    Haond, M.4    De Coster, W.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.