Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches

Journal of Applied Physics

Volumn 92, Issue 7, 2002, Pages 3730-3739

  Venugopal, R ^a   Ren, Z ^a   Datta, S ^a   Lundstrom, M S ^a   Jovanovic, D ^b  

^a PURDUE UNIVERSITY   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE DEVICES; BALLISTIC LIMIT; COMPUTATIONALLY EFFICIENT; DISCRETIZATIONS; ELECTRON TRANSPORT; FULLY DEPLETED; N-CHANNEL; NANO SCALE; NANOSCALE TRANSISTORS; NONEQUILIBRIUM GREEN'S-FUNCTION EQUATIONS; POISSON'S EQUATION; QUANTUM MECHANICAL SIMULATIONS; QUANTUM TRANSPORT; REAL-SPACE; SILICON-ON-INSULATOR TRANSISTORS; SIMULATION METHODS; THIN BODY;

COMPUTATIONAL EFFICIENCY; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; NANOTECHNOLOGY; POISSON EQUATION; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; TWO DIMENSIONAL;

HAMILTONIANS;

EID: 18644369368     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1503165     Document Type: Article

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