Microscopic modeling of nonlinear transport in ballistic nanodevices

IEEE Transactions on Electron Devices

Volumn 50, Issue 9, 2003, Pages 1897-1905

  Mateos, Javier ^a   Vasallo, B G ^a   Pardo, Daniel ^a   González, Tomás ^a   Galloo, Jean Sébastien ^b   Bollaert, Sylvain ^b   Roelens, Yannick ^b   Cappy, Alain ^b  

^a UNIVERSITY OF SALAMANCA   (Spain)

^b CNRS   (France)

Author keywords

Ballistic transport; Monte Carlo simulation; Terahertz devices

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC SPACE CHARGE; ELECTRON TRANSPORT PROPERTIES; MOLECULAR BEAM EPITAXY; MONTE CARLO METHODS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; TWO DIMENSIONAL;

BALLISTIC NANODEVICES; TERAHERTZ DEVICES;

SEMICONDUCTOR DEVICES;

EID: 0042912823     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.815858     Document Type: Article

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