nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs

IEEE Transactions on Electron Devices

Volumn 50, Issue 9, 2003, Pages 1914-1925

  Ren, Zhibin ^a   Venugopal, Ramesh ^c   Goasguen, Sebastien ^b   Datta, Supriyo ^b   Lundstrom, Mark S ^b  

^a IBM   (United States)

^b PURDUE UNIVERSITY   (United States)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

Boltzmann transport equation; B ttiker probes; Double gate; Drift diffusion; MOSFETs; nanoMOS; Quantum transport; Scattering

Indexed keywords

COMPUTATIONAL METHODS; COMPUTER AIDED NETWORK ANALYSIS; ELECTRON DEVICE TESTING; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); GREEN'S FUNCTION; MOSFET DEVICES; QUANTUM ELECTRONICS;

BOLTZMANN TRANSPORT EQUATION; BUTTIKER PROBES; DOUBLE-GATE TRANSISTORS; DRIFT DIFFUSION; QUANTUM TRANSPORT;

NANOTECHNOLOGY;

EID: 0041910831     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.816524     Document Type: Article

References (37)

1. International Technology Roadmap for Semiconductors (ITRS) [Online]. Available: http://public.itrs.net
2. A. Bachtold, P. Hadley, and C. Dekker, "Logic circuits with carbon nanotube transistors," Science, vol. 294, p. 1317, 2001.
3. 1/2 (η) to describe electron density in a semiconductor," Solid-State Electron., vol. 25, p. 1067, 1982.
4. M. Büttiker, "Four-terminal phase coherent conductance," Phys. Rev. Lett., vol. 57, p. 1761, 1986.
5. M. Cahay, M. McLennan, S. Datta, and M. S. Lundstrom, "Importance of space-charge effects in resonant tunneling devices," Appl. Phys. Lett., vol. 50, p. 612, Mar. 9, 1987.
6. S. Datta, Electronic Transport in Mesoscopic Systems. Cambridge, MA: Cambridge Univ. Press, 1997.
7. P. Damle, A. W. Ghosh, and S. Datta, "First principles analysis of molecular conduction using quantum chemistry software," Chem. Phys., vol. 281, p. 171, 2002.
8. P. Damle, A. W. Ghosh, and S. Datta, "Nanoscale device modeling," Molec. Nanoelectron., 2002.
9. S. Datta, "Nanoscale device modeling: The Green's function method," Superlatt. Microstruct., vol. 28, p. 253, 2000.
10. V. Derycke, R. Martel, J. Appenzeller, and Ph. Avouris, "Carbon nanotube inter- and intramolecular logic gates," Nano Lett., vol. 1, p. 453, 2001.
11. Standard (2003). [Online]. Available: http://www.ece.purdue.edu/celab
12. A. Asenov, A. R. Brown, and J. R. Watling, "The use of quantum potentials for confinement in semiconductor devices," in Proc. 5th Int. Conf. Modeling Simulation Microsyst., San Juan, PR, Apr., 21-25 2002, pp. 490-493.
13. D. Jovanovic and R. Venugopal, Proc. 7th Int. Workshop Computat. Electron., Glasgow, U.K., 2000.
14. Standard (2003). [Online]. Available: http://www-hpc.jpl.nasa.gov/PEP/gekco/nemo/nemo.html
15. L. V. Keldysh, "Diagram technique for nonequilibrium processes," Sov. Phys. JETP, vol. 20, p. 1018, 1965.
16. J. Knoch, B. Lengeler, and J. Appenzeller, "Quantum simulations of an ultrashort channel single-gated n-MOSFET on SOI," IEEE Trans. Electron Devices, vol. 49, pp. 1212, July 2002.
17. R. Lake and S. Datta, "Nonequilibrium Green's function method applied to double barrier resonant-tunneling diodes," Phys. Rev. B, vol. 45, p. 6670, 1992.
18. D. C. Langreth, "Linear and nonlinear electron transport in solids," in NATO Advanced Study Instruction Series B, New York: Plenum, 1976, vol. 17, p. 3.
19. M. S. Lundstrom and Z. Ren, "Essential physics of nanoscale MOSFETs," IEEE Trans. Electron Devices, vol. 49, p. 133, Jan. 2002.
20. P. L. McEuen, M. S. Fuhrer, and H. Park, "Single-walled carbon nanotube electronics," IEEE Trans. Nanotechnol., vol. 1, p. 78, Mar. 2002.
21. Nanotechnology Simulation Hub (2003). [Online]. Available: http://www.nanohub.purdue.edu
22. M. Nekovee, B. Geurts, H. M. J. Bootsand, and M. F. H. Schuurmans, "Failure of extended-moment-equation approaches to describe ballistic transport in submicrometer structures," Phys. Rev. B, vol. 45, p. 6643, 1992.
23. M. Paulsson, F. Zahid, and S. Datta, "Resistance of a molecule," Tech. Rep., www.arxiv.org/abs/cond-mat/0/208/183, 2002.
24. C. S. Rafferty, B. Biegel, Z. Yu, M. G. Acona, J. Bude, and R. W. Dutton, "Multidimensional quantum effects simulation using a density gradient model and script level programming technique," in Proc. SISPAD'98, 1998, p. 137.
25. Z. Ren, R. Venugopal, S. Datta, M. S. Lundstrom, D. Jovanovic, and J. G. Fossum, "The ballistic nanotransistor: A simulation study," in IEDM Tech. Dig., 2000, p. 715.
26. Z. Ren, "Nanoscale MOSFETs: Physics, simulation, and design," Ph.D. dissertation, Purdue Univ., West Lafayette, IN, Dec. 2001.
27. Z. Ren, R. Venugopal, S. Datta, and M. S. Lundstrom, "Examination of design and manufacturing issues in a 10 nm double gate MOSFET using nonequilibrium Green's function simulation," in IEDM Tech. Dig., Dec. 3-5, 2001, p. 107.
28. J. H. Rhew and M. S. Lundstrom, "Benchmarking macroscopic transport models for nanotransistor TCAD," J. Computat. Electron., 2002.
29. L. Shifren, A. Akis, and D. K. Ferry, "Correspondence between quantum and classical motion: Comparing bohmian mechanics with a smoothed effective potential," Phys. Lett. A, vol. 2764, p. 75, 2000.
30. A. Svizhenko, M. Anantram, and T. Govindan, "The role of scattering in nanotransistors," IEEE Trans. Electron Devices, vol. 50, pp. 1459-1466, June 2003.
31. A. Svizhenko, M. Anantram, T. Govindan, B. Biegel, and R. Venugopal, "Nano-transistor modeling: Two dimensional Green's function method," J. Appl. Phys., vol. 91, p. 2343, 2002.
32. W. Tian, S. Datta, S. Hong, R. Riefenberger, J. I. Henderson, and C. P. Kubiak, "Conductance spectra of molecular wires," J. Chem. Phys., vol. 109, p. 2874, 1998.
33. H. Tsuchiya and U. Ravaioli, "Particle Monte-Carlo simulation of quantum phenomena in semiconductor nanostructures," J. Appl. Phys., vol. 89, p. 4023, 2001.
34. F. Venturi, R. K. Smith, E. C. Sangiorgi, M. R. Pinto, and B. Ricco, "A general purpose device simulator coupling Poisson and Monte Carlo transport with applications to deep submicron MOSFETs," IEEE Trans. Computer-Aided Design, vol. 8, p. 360, Apr. 1989.
35. R. Venugopal, Z. Ren, S. Datta, M. S. Lundstrom, and D. Jovanovic, "Simulating quantum transport in nanoscale MOSFETs: Real versus mode space approaches," J. Appl. Phys., vol. 92, p. 3730, 2002.
36. R. Venugopal, M. Paulsson, S. Goasguen, S. Datta, and M. Lundstrom, "A simple quantum mechanical treatment of scattering in nanoscale transistors," J. Appl. Phys., vol. 93, p. 5613, 2003.
37. Y. Fu, M. Karlsteen, M. Willander, N. Collaeert, and K. De Meyer, "Quantum transport and I-V characteristics of quantum sized field-effect-transistors," Superlatt. Microstruct., vol. 24, no. 2, p. 111, 1998.