Impact of technological parameters on non-stationary transport in realistic 50 nm MOSFET technology

Solid-State Electronics

Volumn 46, Issue 7, 2002, Pages 1045-1050

  Munteanu, D ^a   Le Carval, G ^a   Guegan, G ^a  

^a CEA LETI   (France)

Author keywords

MOSFET technology; Non stationary effects; Numerical simulation

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRON TRANSPORT PROPERTIES; OPTIMIZATION;

NON-STATIONARY TRANSPORT;

MOSFET DEVICES;

EID: 0036642915     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00040-0     Document Type: Conference Paper

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