Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 fjim MOSFET's: A 3-D "atomistic" simulation study

IEEE Transactions on Electron Devices

Volumn 45, Issue 12, 1998, Pages 2505-2513

  Asenov, Asen ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

3 D; Fluctuations; MOSFET; Numerical simulation; Threshold

Indexed keywords

COMPUTER SIMULATION; SEMICONDUCTOR DOPING; THREE DIMENSIONAL; THRESHOLD VOLTAGE;

RANDOM DOPANTS; VOLTAGE FLUCTUATIONS;

MOSFET DEVICES;

EID: 0032320827     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.735728     Document Type: Article

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