Two-dimensional quantum effects in nanoscale MOSFETs

IEEE Transactions on Electron Devices

Volumn 49, Issue 1, 2002, Pages 25-31

  Pirovano, Agostino ^b   Lacaita, Andrea L ^a,b   Spinelli, Alessandro S ^a,c  

^a IEEE   (Italy)

^b POLITECNICO DI MILANO   (Italy)

^c UNIVERSITY OF INSUBRIA   (Italy)

Author keywords

Device simulations; MOSFETs; Quantum effects; Schr dinger equation

Indexed keywords

DRAIN CURRENT; FOURIER INTERPOLATION TECHNIQUE; QUANTUM DISCHARGE DISTRIBUTION; QUANTUM EFFECTS; QUANTUM MECHANICAL DEVICE SIMULATOR; QUANTUM TRANSMITTING BOUNDARY METHOD; SCHRODINGER EQUATION; SEMICLASSICAL TRANSPORT MODEL; SHORT CHANNEL EFFECTS; SUBTHRESHOLD SLOPE DRAIN INDUCED BARRIER LOWERING;

BOUNDARY CONDITIONS; CALCULATIONS; COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC DENSITY OF STATES; INTEGRATED CIRCUIT LAYOUT; MATHEMATICAL MODELS; PARTIAL DIFFERENTIAL EQUATIONS; PERFORMANCE; POISSON EQUATION; QUANTUM THEORY; TWO DIMENSIONAL;

MOSFET DEVICES;

EID: 0036247604     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974744     Document Type: Article

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