Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

IEEE Transactions on Electron Devices

Volumn 50, Issue 9, 2003, Pages 1837-1852

  Asenov, Asen ^a   Brown, Andrew R ^a   Davies, John H ^a   Kaya, Savas ^b   Slavcheva, Gabriela ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b Ohio University   (United States)

Author keywords

Interface roughness; Intrinsic parameter fluctuation; Line edge roughness; MOSFETs; Numerical simulation; Random discrete dopants; Scaling

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; GRADIENT METHODS; GREEN'S FUNCTION; INTERFACES (MATERIALS); PARAMETER ESTIMATION; SEMICONDUCTOR DEVICE MANUFACTURE; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

INTERFACE ROUGHNESS; INTRINSIC PARAMETER FLUCTUATION; LINE EDGE ROUGHNESS; RANDOM DISCRETE DOPANTS;

MOSFET DEVICES;

EID: 0042912833     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.815862     Document Type: Article

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