A compact scattering model for the nanoscale double-gate MOSFET

IEEE Transactions on Electron Devices

Volumn 49, Issue 3, 2002, Pages 481-489

  Rahman, Anisur ^b   Lundstrom, Mark S ^a,b  

^a IEEE

^b PURDUE UNIVERSITY   (United States)

Author keywords

Charge carrier processes; Degeneracy; Device simulation; Double gate MOSFETs; Mobility; Quantum effects; Semiconductor device modeling

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; GATES (TRANSISTOR); NANOTECHNOLOGY; QUANTUM THEORY; SCATTERING; SEMICONDUCTOR DEVICE MODELS;

COMPACT SCATTERING MODEL;

MOSFET DEVICES;

EID: 0036494049     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.987120     Document Type: Article

References (24)

1. Monte Carlo simulation of a 30 nm dual-gate MOSFET: How short can Si go?
2. Nanoscale field-effect transistors: An ultimate size analysis
3. The ballistic nanotransistor: A simulation study
4. Analytical models for n+-p+ double-gate SOI MOSFET's
5. A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects
6. A critical examination of the assumptions underlying macroscopic transport equations for silicon devices
7. Electron transport in a model Si transistor
8. Alternative approach to the solution of added carrier transport problems in semiconductors
9. A flux-based study of carrier transport in thin-base diodes and transistors
10. Elementary scattering theory of the Si MOSFET
11. Monte Carlo simulation of electron transport properties in extremely thin SOI
12. Electron mobility behavior in extremely thin SOI MOSFET's
13. Essential physics of carrier transport in nanoscale MOSFET's
14. On the performance limits for Si MOSFET's: A theoretical study
15. Ballistic metal-oxide-semiconductor field effect transistor
16. Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance
17. Semiconductor thickness effects in the double-gate SOI MOSFET's
18. Dual-gate operation and volume inversion in n-channel SOI MOSFET's
19. Electronic properties of two-dimensional systems
20. On experimental determination of carrier velocity in deeply scaled NMOS: How close to the thermal limit?
21. 1/2(η), used to describe electron density m a semiconductor
22. Simulation of nanoscale MOSFETs: A scattering theory interpretation