Modeling effects of electron-velocity overshoot in a MOSFET

IEEE Transactions on Electron Devices

Volumn 44, Issue 5, 1997, Pages 841-846

  Roldan J B ^a   Gamiz F ^a   Lopez Villanueva J A ^a   Carceller, J E ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRONS; MATHEMATICAL MODELS; PERFORMANCE; SIMULATORS; THERMAL EFFECTS; TRANSCONDUCTANCE; VELOCITY;

CARRIER MOBILITY;

MOSFET DEVICES;

EID: 0031145552     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.568047     Document Type: Article

References (31)

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