Time dependent breakdown of ultrathin gate oxide

IEEE Transactions on Electron Devices

Volumn 47, Issue 7, 2000, Pages 1416-1420

  Yassine, Abdullah M ^a,b   Nariman, H E ^a,b   McBride, Michael ^b   Uzer, Mirac ^a,b   Olasupo, Kola R ^a,b  

^a IEEE

^b ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; MOS CAPACITORS; RELIABILITY; THERMAL EFFECTS;

TIME DEPENDENT DIELECTRIC BREAKDOWN; ULTRATHIN GATE OXIDE;

GATES (TRANSISTOR);

EID: 0034230311     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.848285     Document Type: Article

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