Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1-/mi MOSFET's with epitaxial and <5-doped channels

IEEE Transactions on Electron Devices

Volumn 46, Issue 8, 1999, Pages 1718-1724

  Asenov, Asen ^a,b   Saini, Subhash ^b  

^a IEEE   (United Kingdom)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; MATHEMATICAL MODELS; MOSFET DEVICES; POISSON DISTRIBUTION; THREE DIMENSIONAL; THRESHOLD VOLTAGE;

ATOMISTIC SIMULATION; DELTA DOPING; DOPING CONCENTRATION; EPITAXIAL LAYER; THRESHOLD VOLTAGE FLUCTUATIONS;

SEMICONDUCTOR DOPING;

EID: 0033169519     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.777162     Document Type: Article

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