Role of scattering in nanotransistors

IEEE Transactions on Electron Devices

Volumn 50, Issue 6, 2003, Pages 1459-1466

  Svizhenko, Alexei ^a   Anantram, M P ^a  

^a NASA AMES RESEARCH CENTER   (United States)

Author keywords

Contact resistance; FETs; Leakage currents; Modeling; Molecular electronics; MOSFETs; Nanotechnology; Photons; Physics; Resistance; Scattering; Semicon ductor device modeling; Silicon

Indexed keywords

COMPUTER SIMULATION; ELECTRIC RESISTANCE; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); GREEN'S FUNCTION; HOT CARRIERS; MOSFET DEVICES; PHONONS; SEMICONDUCTOR DEVICE MODELS;

NANOTRANSISTORS;

NANOTECHNOLOGY;

EID: 0043033158     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.813503     Document Type: Article

References (27)

1. J. Kedzierski, P. Xuan, V. Subramanian, J. Bokor, T.-J. King, C. Hu, and E. Anderson, "A 20 nm gate-length ultra-thin body p-mosfet with silicide source/drain," Superlatt. Microstruct., vol. 28, pp. 445-452, 2000.
2. A. Hokazono et al., "14 nm gate length cmosfets utilizing low thermal budget process with poly-sige and ni salicide," in IEDM Tech. Dig., Piscataway, NJ, 2002, pp. 639-642.
3. F. Boeuf, "16 nm planar nmosfet manufacturable within state-of-the-art cmos process thanks to specific design and optimization," in IEDM Tech. Dig., Piscataway, NJ, 2001, pp. 637-640.
4. B. Yu et al., "Finfet scaling to 10 nm gate length," in IEDM Tech. Dig., Piscataway, NJ, 2002, pp. 251-254.
5. Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices. Cambridge, U.K.: Cambridge Univ. Press, 1998.
6. M. Fischetti and S. Laux, "Long-range coluomb interactions in small si devices, part 1: performance and reliability," J. Appl. Phys., vol. 89, pp. 1205-1231, 2001.
7. M. Fischetti, "Long-range coluomb interactions in small si devices, part 2: effective electron mobility in thin-oxide structures," J. Appl Phys., vol. 89, pp. 1232-1250, 2001.
8. M. Fischetti and S. Laux, "Monte carlo study of sub-bandgap impact ionization in silicon field-effect transistors," in IEDM Tech. Dig., 1995, p. 305.
9. R.-H. Yan, A. Ourmazd, K. F. Lee, D. Y. Jeon, C. S. Rafferty, and M. R. Pinto, "Scaling the si metal-oxide-semiconductor field-effect transistor into the 0.1 μm regime using vertical doping engineering," Appl. Phys. Lett., vol. 59, pp. 3315-3317, 1991.
10. D. J. Frank, S. E. Laux, and M. Fischetti, "Monte carlo simulation of a 30 nm dual-gate mosfet: how short can si go?," in IEDM Tech. Dig., 1992, pp. 553-556.
11. Y. Taur, D. A. Buchanan, W. Chen, D. J. Frank, K. E. Ismail, S.-H. Lo, G. A. Sai-Halasz, R. G. Viswanathan, H.-J. C. Wann, S. J. Wind, and H.-S. Wong, "CMOS scaling into the nanometer regime," Proc. IEEE, vol. 85, pp. 486-504, Apr. 1997.
12. H.-S. P. Wong, K. K. Chan, and Y. Taur, "Self-aligned (top and bottom) double-gate mosfet with a 25 nm thick silicon channel," in IEDM Tech. Dig., 1997, pp. 427-430.
13. F. G. Pikus and K. K. Likharev, "Nanoscale field-effect transistors: an ultimate size analysis," Appl. Phys. Lett., vol. 71, pp. 3661-3663, 1997.
14. Z. Ren, R. Venugopal, S. Datta, M. Lundstrom, D. Jovanovic, and D. J. Possum, "The ballistic nanotransistor: a simulation study," in IEDM Tech. Dig., 2000, pp. 715-718.
15. L. Chang, S. Tang, T.-J. King, J. Bokor, and C. Hu, "Gate length scaling and threshold voltage control of double-gate mosfets," in IEDM Tech. Dig., 2000, pp. 719-722.
16. J. R. Watling, A. R. Brown, and A. Asenov et al., "Can the density gradient approach describe the source-drain tunnelling in decanano double-gate MOSFETs?," J. Computat. Electron., 2002.
17. Z. Ren and M. S. Lundstrom, "Essential physics of carrier transport in nanoscale mosfets," IEEE Trans. Electron. Devices, vol. 49, pp. 133-141, Jan. 2002.
18. M. S. Lundstrom, Fundamentals of carrier transport. Reading, MA: Addison-Wesley, 1990.
19. K. Natori, "Ballistic metal-oxide-semiconductor field effect transistor," J. Appl. Phys., vol. 76, p. 4870, 1994.
20. M. S. Lundstrom, "Elementary scattering theory of the MOSFET," IEEE Electron. Device Lett., vol. 18, pp. 361-363, July 1997.
21. P. J. Price, "Monte carlo calculation of electron transport in solids," Semicond. Semimetals, vol. 14, pp. 249-308, 1979.
22. R. Venugopal, Z. Ren, S. Datta, M. S. Lundstrom, and D. Jovanovic, "Simulating quantum transport in nanoscale transistors: real versus mode-space approaches," J. Appl. Phys., vol. 92, pp. 3730-3739, 2002.
23. G. D. Mahan, "Quantum transport equation for electric and magnetic fields," Phys. Rep., vol. 145, p. 251, 1987.
24. R. Lake, G. Klimeck, R. C. Bowen, and D. Jovanovic, "Single and multiband modeling of quantum electron transport through layered semiconductor devices," J. Appl. Phys., vol. 81, p. 7845, 1997.
25. S. Datta, Electronic Transport in Mesoscopic Systems. Cambridge, U.K.: Cambridge Univ. Press, 1997.
26. A. Svizhenko et al., "Two-dimensional quantum mechanical modeling of nanotransistors," J. Appl. Phys., vol. 91, pp. 2343-2354, 2002.
27. M. V. Fischetti and S. E. Laux, "Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-change effects," Phys. Rev. B, vol. 38, pp. 9721-9745, Nov. 1988.