The ballistic nanotransistor: A simulation study

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 715-718

  Ren, Zhibin ^a   Venugopal, Ramesh ^a   Datta, Supriyo ^a   Lundstrom, Mark ^a   Jovanovic, Dejan ^b   Fossum, Jerry ^c  

^a PURDUE UNIVERSITY   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRON TUNNELING; GATES (TRANSISTOR); NANOSTRUCTURED MATERIALS; QUANTUM THEORY; SEMICONDUCTING SILICON; ULTRATHIN FILMS;

BALLISTIC NANOTRANSISTORS; SHORT CHANNEL EFFECTS;

MOSFET DEVICES;

EID: 0034453477     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2000.904418     Document Type: Article

References (12)