Two-dimensional modeling of quantum ballistic transport in ultimate double-gate SOI devices

Solid-State Electronics

Volumn 47, Issue 7 SPEC., 2003, Pages 1219-1225

  Munteanu, D ^a   Autran, J L ^a  

^a AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

Ballistic transport; Double gate devices; Quantum tunnelling; Short channel effects; SOI

Indexed keywords

COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; POISSON EQUATION; QUANTUM THEORY;

QUANTUM TUNNELING;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0038417892     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00039-X     Document Type: Conference Paper

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