Drain current enhancement due to velocity overshoot effects and its analytic modeling

IEEE Transactions on Electron Devices

Volumn 43, Issue 11, 1996, Pages 1870-1875

  Song, Jai Hyuk ^a   Park, Young June ^a   Min, Hong Shick ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); OXIDES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

CHANNEL DOPING CONCENTRATION; VELOCITY OVERSHOOT EFFECTS;

MOSFET DEVICES;

EID: 0030287696     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.543021     Document Type: Article

References (16)

1. G. A. Sai-Halasz M. R. Wordeman D. P. Kern S. Rishton E. Ganin High transconductance and velocity overshoot in $N$ MOS devices at the 0.1 $\mu\hbox{m}$ gate-length level IEEE Electron Device Lett. 9 464 1988 55 366 6946
2. T. Mizuno A. Toriumi M. Iwase M. Takahashi H. Niiyama M. Fukumoto M. Yoshimi Hot-carrier effects in 0.1 $\mu\hbox{m}$ gate length CMOS devices 695 1992
3. Y. Taur S. Wind Y. J. Mii Y. Lii D. Moy K. A. Jenkins C. L. Hen P. J. Coane D. Klaus J. Bucchignano M. Rosenfield M. G. R. Thomson M. Polcari High-performance 0.1 $\mu\hbox{m}$ CMOS devices with 1.5 V power supply IEDM Tech. Dig. 127 1993 1088 8045 347383
4. G. G. Shahidi D. A. Antoniadis H. I. Smith Electron velocity overshoot at room and liquid nitrogen temperatures in silicon inversion layers IEEE Electron Device Lett. 9 94 1988 55 125 2051
5. S. Y. Chou D. A. Antoniadis H. I. Smith Observation of electron velocity overshoot in sub-100-nm-channel MOSFET's in silicon IEEE Electron Device Lett. EDL-6 665 1985
6. T. Kobayashi K. Saito Two-dimensional analysis of velocity overshoot effects in ultra short-channel Si MOSFET's IEEE Trans. Electron Devices ED-32 788 1985
7. W. S. Choi F. Assaderaghi Y. J. Park H. S. Min C. Hu R. W. Dutton Simulation of deep submicron SOI N-MOSFET considering the velocity overshoot effect IEEE Electron Device Lett. 16 333 1995 55 8822 388725
8. W. S. Choi J. G. Ahn Y. J. Park H. S. Min C. G. Hwang A time dependent hydrodynamic device simulator SNU-2D with new discretization scheme and algorithm IEEE Trans. Computer-Aided Design. 13 899 1994 43 7265 293947
9. P. J. Price On the flow equation in device simulation J. Appl. Phys. 63 4718 1988
10. K. Sonoda K. Taniguchi C. Hamaguchi Analytical device model for submicrometer MOSFET's IEEE Trans. Electron Devices 38 2662 1991 16 4086 158688
11. C. G. Sodini P. K. Ko J. L. Moll The effect of high fields on MOS device and circuit performance IEEE Trans. Electron Devices ED-31 1386 1984
12. M. M. Mattausch Analytical MOSFET model for quarter micron technologies IEEE Trans. Computer-Aided Design 13 610 1994 43 6859 277634
13. Z. H. Liu C. Hu J. H. Huang T. Y. Chan M. C. Jeng P. K. Ko Y. C. Cheng Threshold voltage model for deep-submicrometer MOSFET's IEEE Trans. Electron Devices 40 86 1993 16 6383 249429
14. S. Takagi M. Iwase A. Toriumi On the universality of inversion-layer mobility in N-and P-channel MOSFET's IEDM Tech. Dig. 398 1988 713 1415 32840
15. G. F. Niu G. Ruan T. A. Tang An analytic device model including velocity overshoot for subquartermicrometer MOSFET Proc. 5th Int. Conf. Simulation of Semiconductor Devices and Processes (SISDEP'93) 5 285 1993
16. M. R. Pinto E. Sangiorgi J. Bude Silicon MOS transconductance scaling into the overshoot regime IEEE Electron Device Lett. 14 375 1993 55 5885 225584