Examination of design and manufacturing issues in a 10 nm double gate MOSFET using nonequilibrium Green's function simulation

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 107-110

  Ren, Zhibin ^a   Venugopal, Ramesh ^a   Datta, Supriyo ^a   Lundstrom, Mark ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); GREEN'S FUNCTION; LEAKAGE CURRENTS; QUANTUM ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SENSITIVITY ANALYSIS;

ELECTROSTATIC INTEGRITY; JUNCTION ABRUPTNESS; NONEQUILIBRIUM GREEN FUNCTION SIMULATION;

MOSFET DEVICES;

EID: 0035717886     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)