Two-dimensional quantum mechanical modeling of nanotransistors

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 2343-2354

  Svizhenko, A ^a   Anantram, M P ^a   Govindan, T R ^a   Biegel, B ^a   Venugopal, R ^b  

^a NASA AMES RESEARCH CENTER   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

2-D QUANTUM MECHANICAL SIMULATION; BALLISTIC MODEL; DEVICE PERFORMANCE; GATE REGION; GATE TUNNELING CURRENTS; GATE VOLTAGES; GATE-LEAKAGE CURRENT; NANO TRANSISTORS; NANOSCALE TRANSISTORS; NARROW CHANNEL; NONEQUILIBRIUM GREEN'S-FUNCTION EQUATIONS; OPEN BOUNDARY CONDITION; PHASE-COHERENT TRANSPORT; POISSON'S EQUATION; POTENTIAL PROFILES; QUANTITATIVE RESULT; QUANTUM EFFECTS; QUANTUM MECHANICAL; QUANTUM MECHANICAL SIMULATIONS; QUANTUM-MECHANICAL MODELING; SIGNIFICANT IMPACTS;

ALGORITHMS; BALLISTICS; ELECTRON TUNNELING; FIELD EFFECT TRANSISTORS; POISSON EQUATION; QUANTUM ELECTRONICS;

TWO DIMENSIONAL;

EID: 33845426952     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1432117     Document Type: Article

References (47)

1. J. M. Hergenrother et al., International Electron Devices Meeting, 1999, IEDM Technical Digest, p. 75.
2. G. Timp et al., The ballistic nanotransistor, International Electron Devices Meeting, 1999, IEDM Technical Digest, p. 55.
3. J. Appenzeller, R. Martel, P. Solomon et al., Appl. Phys. Lett. 77, 298 (2000).
4. Y. Taur, D. A. Buchanan, W. Chen et al., Proc. IEEE 85, 486 (1997).
5. Y. Taur, C. H. Wann, and D. J. Frank, 1998, IEDM Technical Digest, p. 789.
6. H-S. P. Wong, D. J. Frank, P. M. Solomon, C. H. J. Wann, and J. L. Welser, Proc. IEEE 87, 537 (1999).
7. S. Thompson, P. Packan, and M. Bohr, Intel Technology Journal which can be found at developer.intel.com/technology/itj/Q31998/articles.
8. The national technology roadmap for semiconductor technology needs, 1997 edition, Semiconductor Industry Association.
9. K. Natori, J. Appl. Phys. 76, 4870 (1994).
10. M. S. Lundstrom, IEEE Electron Device Lett. 18, 361 (1997).
11. Z. Ren and M. Lundstrom, Superlattices Microstruct. 27, 177 (2000).
12. Y. Naveh and K. K. Likharev, Superlattices Microstruct. 27, 111 (2000);
13. F. G. Pikus and K. K. Likharev, Appl. Phys. Lett. 71, 3661 (1997).
14. Z. Ren, R. Venugopal, S. Datta, M. Lundstrom, D. Jovanovic, and J. Fossum, International Electron Devices Meeting, 2000, IEDM Technical Digest, p. 715.
15. B. A. Biegel, C. S. Rafferty, Z. Yu, M. G. Ancona, and R. W. Dutton, in Proceedings of the Gigascale Integration Technology Symposium, 35th Annual Technical Meeting, Society of Engineering Science (SES35), September 27-30, 1998, Pullman, WA, p. 53.
16. M. G. Ancona and H. F. Tiersten, Phys. Rev. B 35, 7959 (1987).
17. D. K. Ferry, D. K. Ferry, R. Akis, and D. Vasileska, International Electron Devices Meeting, 2000, IEDM Technical Digest, p. 287.
18. Medici User's Manual, Avant! Corporation.
19. M. Buttiker, Phys. Rev. B 46, 12485 (1992).
20. S. Datta, Electronic Transport in Mesoscopic Systems (Cambridge University Press, Cambridge, 1997).
21. R. Lake, G. Klimeck, R. C. Bowen, and D. Jovanovic, J. Appl. Phys. 81, 7845 (1997).
22. G. Klimeck, D. Blanks, and R. Lake, Nanoelectronic Modeling Tool (NEMO), User's Manual and Reference Guide, Raytheon, 1998.
23. A. Abramo, International Conference on Simulation of Semiconductor Processes and Devices, 1997, SISPAD 97, p. 105.
24. Y. Fu and M. Willander, Superlattices Microstruct. 82, 5227 (1997).
25. A. S. Spinelli, A. Benvenuti, and A. Pacelli, IEEE Trans. Electron Devices 45, 1342 (1998).
26. A. Abramo, A. Cardin, L. Selmi, and E. Sangiorgi, IEEE Trans. Electron Devices 47, 1858 (2000).
27. Z. Han, N. Goldsman, and C-K. Lin, International Conference on Simulation of Semiconductor Processes and Devices, 2000, SISPAD 2000, p. 62.
28. D. Jovanovic and R. Venugopal, International Workshop on Computational Electronics, Book of Abstracts, IWCE Glasgow, 2000, p. 30
29. D. Jovanovic, R. Venugopal, S. Egley, M. Lundstrom, and S. Datta, Numerical simulation of MOSFETs using nanoequilibrium field theory, the third NASA Workshop on Device Modeling, NASA Ames Research Center, Moffett Field, CA, August 26-27, 1999, Book of Abstracts.
30. A. Svizhenko, M. P. Anantram, and T. R. Govindan, 2D quantum simulation of MOSFET using the nonequilibrium Green's function method, International Workshop on Computational Electronics, Book of Abstracts, IWCE Glasgow, 2000, p. 112
31. A. Svizhenko, 2D Quantum Simulations in MOSFETs, Meeting Abstracts, Volume 99-2, Abstract No. 1866, 1999 Joint International Meeting of the Electrochemical Society, Honolulu, Hawaii, October 17-22, 1999.
32. M. V. Fischetti and S. E. Laux, Phys. Rev. B 48, 2244 (1993).
33. U. Ravaioli, B. Winstead, C. Wordelman, and A. Kepkep, Superlattices Microstruct. 27, 137 (2000).
34. D. Vasileska, W. J. Gross, and D. K. Ferry, Superlattices Microstruct. 27, 147 (2000).
35. Proceedings of The Third NASA Workshop on Device Modeling, Superlattices Microstruct. 27, (2000).
36. G. D. Mahan, Many Particle Physics, 2nd ed. (Plenum, New York, 1990).
37. G. D. Mahan, Phys. Rep. 145, 251 (1987); A number of useful relationships involving the nonequilibrium Green's functions can be found in this paper.
38. See 25 nm device in http://www-mtl.mit.edu:80/Well/.
39. C. Bowen, private communication based on calculations using NEMO.
40. A. S. Spinelli, A. Pacelli, and A. L. Lacaita, IEEE Trans. Electron Devices 47, 2366 (2000).
41. S. Mori and T. Ando, Phys. Rev. B 19, 6433 (1979).
42. D. Vasileska and D. K. Ferry, IEEE Trans. Electron Devices 44, 577 (1997).
43. A. Asenov, G. Slavcheva, A. R. Brown, R. Balasubramaniam, J. H. Davies, A. Asenov, and S. Saini, IEEE Trans. Electron Devices 47, 805 (2000);
44. A. Asenov, A. R. Brown, J. H. Davies, and S. Saini, IEEE Trans. Comput.-Aided Des. 18, 1558 (1999).
45. D. J. Frank and H.-S. P. Wong, Simulation of stochastic doping effects in Si MOSFETs International Workshop on Computational Electronics, 2000, Book of Abstracts, IWCE Glasgow 2000, 7th International Workshop, 2000, p. 2.
46. A-P. Jauho, N. S. Wingreen, and Y. Meir, Phys. Rev. B 50, 5528 (1994).
47. M. P. Anantram and S. Datta, Phys. Rev. B 51, 7632 (1995).