Analytical modeling of quantization and volume inversion in thin Si-Film DG MOSFETs

IEEE Transactions on Electron Devices

Volumn 49, Issue 2, 2002, Pages 287-294

  Ge, Lixin ^a,b   Fossum, Jerry G ^a,b  

^a IEEE   (United States)

^b University of Florida   (United States)

Author keywords

Carrier mobility; Double gate MOSFETs; Energy quantization; Volume inversion

Indexed keywords

CARRIER CONFINEMENT; DOUBLE GATE MOSFET; ELECTRIC FIELD DEPENDENCE; ENERGY QUANTIZATION; GATE-GATE CHARGE COUPLING; QUANTUM EFFECTS; QUANTUM MECHANICAL VARIATIONAL APPROACH; SCHRODINGER EQUATIONS; TRANSVERSE ELECTRIC FIELD; VOLUME INVERSION;

CARRIER MOBILITY; ELECTRIC FIELDS; ELECTRIC NETWORK SYNTHESIS; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; MATHEMATICAL MODELS; PARTIAL DIFFERENTIAL EQUATIONS; POISSON EQUATION; QUANTUM THEORY; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; THIN FILMS;

MOSFET DEVICES;

EID: 0036475197     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.981219     Document Type: Article

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