Chemical and electronic structure of ultrathin zirconium oxide films on silicon as determined by photoelectron spectroscopy

Solid-State Electronics

Volumn 46, Issue 11, 2002, Pages 1679-1685

  Miyazaki, S ^a   Narasaki, M ^a   Ogasawara, M ^a   Hirose, M ^b  

^a HIROSHIMA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Defect states; High k gate dielectrics; Interface structure; Photoelectron yield spectroscopy; Photoemission; X ray photoelectron spectroscopy; ZrO2

Indexed keywords

ANNEALING; BAND STRUCTURE; DIELECTRIC MATERIALS; ELECTRONIC STRUCTURE; ENERGY DISSIPATION; HETEROJUNCTIONS; INTERFACES (MATERIALS); PERMITTIVITY; PHOTOEMISSION; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIA;

PHOTOELECTRONS;

THIN FILMS;

EID: 0036838348     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00161-2     Document Type: Conference Paper

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