A dual-metal gate CMOS technology using nitrogen-concentration-controlled TiNx film

IEEE Transactions on Electron Devices

Volumn 48, Issue 10, 2001, Pages 2363-2369

  Wakabayashi, Hitoshi ^a,b   Saito, Yukishige ^c   Takeuchi, Kiyoshi ^c   Mogami, Tohru ^a,c   Kunio, Takemitsu ^a,c  

^a IEEE   (United States)

^b USA   (United States)

^c NEC CORPORATION   (Japan)

Author keywords

CMOS; Dual metal gate electrodes; Low doped channel; N I I; Titanium nitride; Work function

Indexed keywords

DUAL-METAL GATE ELECTRODES; LOW DOPED CHANNEL STRUCTURE; TITANIUM NITRIDE FILM;

CMOS INTEGRATED CIRCUITS; DIELECTRIC FILMS; ELECTRODES; GATES (TRANSISTOR); ION IMPLANTATION; LITHOGRAPHY; NITROGEN; PHYSICAL VAPOR DEPOSITION; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE STRUCTURES; THRESHOLD VOLTAGE; TITANIUM NITRIDE;

MOSFET DEVICES;

EID: 0035472007     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.954478     Document Type: Article

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