Density-gradient analysis of MOS tunneling

IEEE Transactions on Electron Devices

Volumn 47, Issue 12, 2000, Pages 2310-2319

  Ancona, Mario G ^a   Yu, Z ^a   Dutton, Robert W ^a   Vande Voorde, P J ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Density gradient theory; Gate current; MOS; Tunneling

Indexed keywords

EID: 0001533067     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.887013     Document Type: Article

References (18)

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