Scaling limit of the MOS transistor - A ballistic MOSFET

IEICE Transactions on Electronics

Volumn E84-C, Issue 8, 2001, Pages 1029-1036

  Natori, K ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Ballistic MOSFET; Current voltage characteristics; Injection velocity; MOSFET; Scaling limit

Indexed keywords

CARRIER MOBILITY; CRITICAL CURRENTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT CONTROL; ELECTRIC CURRENT MEASUREMENT; ELECTRON TRANSPORT PROPERTIES; MOSFET DEVICES; NANOTECHNOLOGY; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL EFFECTS;

BALLISTIC TRANSPORT; CARRIER DEGENERACY; CARRIER DISTRIBUTION; CARRIER SCATTERING; DRAIN CURRENT; INJECTION VELOCITY; INTRINSIC CHANNEL STRUCTURE;

SEMICONDUCTOR DEVICE TESTING;

EID: 0035421280     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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