A computationally efficient model for inversion layer quantization effects in deep submicron JV-channel MOSFET's

IEEE Transactions on Electron Devices

Volumn 43, Issue 1, 1996, Pages 90-96

  Hareland, Scott A ^a   Krishnarnurthy, Shyam ^a   Jallepalli, Srinivas ^a   Yeap, Choh Fei ^a   Hasnat, Khaled ^a   Tasch Jr , Al F ^a   Maziar, Christine M ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; ELECTRONS; MATHEMATICAL MODELS; MOS DEVICES; OXIDES; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICA;

ELECTRON DISTRIBUTION; FOWLER-NORDHEIM TUNNELING CURRENT MEASUREMENT; POISSON EQUATIONS; QUANTIZATION EFFECTS; QUANTUM MECHANICAL EFFECTS; SCHRODINGER EQUATIONS; TWO DIMENSIONAL SYSTEMS;

MOSFET DEVICES;

EID: 0029752460     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.477597     Document Type: Article

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